Shandong Peak-tech New Material Co., Ltd. is one of the most reliable manufacturers and suppliers of cmp polishing slurry in China. With a professional production team, we are able to meet the needs of the majority of our customers. Welcome to buy durable cmp polishing slurry for sale here from our factory.
CMP Polishing Slurry for Precision Surface Planarization
CMP polishing slurry combines a controlled colloidal silica abrasive phase with application-specific liquid chemistry. Peak-tech HP dispersions provide 10–20 nm nano silica candidates for developing acidic or near-neutral slurries used on semiconductor wafers, compound semiconductors, electronic substrates, precision ceramics and optical glass.
Supply-scope notice: The grades below are high-purity colloidal silica abrasive candidates. Oxidizers, complexants, inhibitors, surfactants and other additives must be selected and qualified for the actual substrate and CMP process unless a finished custom slurry specification is agreed.
Colloidal Silica Abrasive Grades for CMP Slurry Development
| Model | Particle Size | SiO₂ Content | Metal Ions | pH | Shelf Life |
|---|---|---|---|---|---|
| HP25D10 | 10–20 nm | 25±1% | ＜20 ppm | 7–9 | ≥12 months |
| HP3010 | 10–20 nm | 30±1% | ＜50 ppm | 7–9 | ≥12 months |
| HP2510A | 10–20 nm | 21–25% | ＜50 ppm | 2–4 | ≥12 months |
| HP4010A | 10–20 nm | 38–42% | ＜50 ppm | 2–4 | ≥12 months |
Aluminum present as Al₂O₃ is excluded from the listed metal-ion total. These HP grades are CMP candidates, not finished slurry specifications. Qualification requires element-specific limits, particle distribution, agglomerate control and polishing trials.
Build CMP Performance around Four Control Areas
Lowest Published Metal Total
HP25D10 provides the tightest published aggregate metal-ion limit for CMP trials with NH₄⁺ stabilization and pH 7–9.
Define the CMP Contamination Budget
State limits for sodium, iron, aluminum and other wafer- or substrate-sensitive elements rather than relying only on a total value.
Control PSD and Agglomerates
All four grades share a 10–20 nm range. Define distribution, oversized-particle limits, filtration and the measurement method.
Match the CMP Slurry Window
Select acidic or near-neutral candidates according to substrate, oxidizer, complexant, inhibitor and removal-rate targets.
Information Needed to Develop or Qualify the Slurry
CMP approval requires contamination, particle, slurry-performance and defect-control criteria beyond the product-family table.
- Elemental limits: provide maximum values for each controlled metal and the reporting basis.
- Analytical methods: specify ICP-MS, ICP-OES or other required methods, detection limits and sample preparation.
- Particle specification: define nominal size, PSD, oversized-particle and agglomerate limits, filtration and metrology.
- Slurry chemistry: identify substrate, pH, oxidizer, complexant, inhibitor, surfactant and permitted ionic species.
- Polishing targets: state removal rate, selectivity, non-uniformity, roughness, defectivity and scratch limits.
- Order details: include trial quantity, annual demand, clean packaging and destination country.
Request a CMP Polishing Slurry Candidate
Send the substrate, film stack, slurry chemistry, particle and metal limits, polishing targets, tool conditions, trial quantity and annual demand.
Request a CMP Slurry RecommendationProtect Product Stability During Storage
Packaging Options
Available polyethylene packaging sizes are 25 kg, 250 kg and 1000 kg.
Storage Temperature
Store at 0–40°C and protect from freezing. Temperatures below 0°C can cause irreversible gelation.
Direct Sunlight
Avoid prolonged exposure to direct sunlight during storage and transportation.
Container Closure
Keep containers closed to limit water evaporation and precipitation of solid silica particles.
CMP Polishing Slurry Questions
Which silica grades can be evaluated in CMP polishing slurry?
The high-purity candidate grades are HP25D10, HP3010, HP2510A and HP4010A.
Which CMP candidate has the lowest published metal-ion total?
HP25D10 is listed below 20 ppm; the other published HP grades are listed below 50 ppm.
Is a total metal-ion limit sufficient for CMP qualification?
Not always. Buyers should define element-specific limits, analytical methods, detection limits and reporting basis.
What particle controls are needed for CMP?
Define the primary size, distribution, oversized particles, agglomerates, filtration, sampling and measurement method.
Which polishing results should be validated?
Validate removal rate, selectivity, within-wafer uniformity, surface roughness, scratches, particles and other substrate-specific defects.
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CMP Polishing Slurry Application Areas
HP colloidal silica grades can be evaluated as the abrasive phase in CMP and precision-polishing slurry formulations. Final approval requires substrate-specific removal-rate, selectivity, uniformity, roughness and defect testing.
Semiconductor Wafer CMP
Evaluated as an abrasive dispersion where particle control, metal contamination and slurry chemistry are tightly specified.
Electronic Substrate CMP
Suitable candidates can be tested for compatible ceramic, glass and other precision electronic substrates.
Precision Ceramic Polishing
High-purity grades may be assessed where controlled particle size and trace metals affect surface quality.
Glass and Display Polishing
Controlled nanosilica can be qualified for compatible precision-finishing and functional-material processes.
Compound Semiconductor CMP
Candidate grades can be tested after matching slurry chemistry, removal selectivity and defect limits to the substrate.
Custom CMP Slurry Development
Supports development requiring defined element limits, particle metrology, filtration, lot control and clean packaging.
