Shandong Peak-tech New Material Co., Ltd. is one of the most reliable manufacturers and suppliers of colloidal silica for cmp polishing in China. With a professional production team, we are able to meet the needs of the majority of our customers. Welcome to buy durable colloidal silica for cmp polishing for sale here from our factory.
Colloidal Silica for CMP Polishing Grade Comparison
| Model | Particle Size | SiO₂ Content | Metal Ions | pH | Shelf Life |
|---|---|---|---|---|---|
| HP25D10 | 10–20 nm | 25±1% | ＜20 ppm | 7–9 | ≥12 months |
| HP3010 | 10–20 nm | 30±1% | ＜50 ppm | 7–9 | ≥12 months |
| HP2510A | 10–20 nm | 21–25% | ＜50 ppm | 2–4 | ≥12 months |
| HP4010A | 10–20 nm | 38–42% | ＜50 ppm | 2–4 | ≥12 months |
Aluminum present as Al₂O₃ is excluded from the listed metal-ion total. These HP grades are CMP candidates, not finished slurry specifications. Qualification requires element-specific limits, particle distribution, agglomerate control and polishing trials.
Control Particles, Contamination and Slurry Chemistry
Lowest Published Metal Total
HP25D10 provides the tightest published aggregate metal-ion limit for CMP trials with NH₄⁺ stabilization and pH 7–9.
Define the CMP Contamination Budget
State limits for sodium, iron, aluminum and other wafer- or substrate-sensitive elements rather than relying only on a total value.
Control PSD and Agglomerates
All four grades share a 10–20 nm range. Define distribution, oversized-particle limits, filtration and the measurement method.
Match the CMP Slurry Window
Select acidic or near-neutral candidates according to substrate, oxidizer, complexant, inhibitor and removal-rate targets.
Information Needed for CMP Qualification
CMP approval requires contamination, particle, slurry-performance and defect-control criteria beyond the product-family table.
- Elemental limits: provide maximum values for each controlled metal and the reporting basis.
- Analytical methods: specify ICP-MS, ICP-OES or other required methods, detection limits and sample preparation.
- Particle specification: define nominal size, PSD, oversized-particle and agglomerate limits, filtration and metrology.
- Slurry chemistry: identify substrate, pH, oxidizer, complexant, inhibitor, surfactant and permitted ionic species.
- Polishing targets: state removal rate, selectivity, non-uniformity, roughness, defectivity and scratch limits.
- Order details: include trial quantity, annual demand, clean packaging and destination country.
Request Colloidal Silica for a CMP Trial
Send the substrate, slurry chemistry, particle and metal limits, polishing targets, trial quantity and annual demand.
Request Qualification SupportProtect Product Stability During Storage
Packaging Options
Available polyethylene packaging sizes are 25 kg, 250 kg and 1000 kg.
Storage Temperature
Store at 0–40°C and protect from freezing. Temperatures below 0°C can cause irreversible gelation.
Direct Sunlight
Avoid prolonged exposure to direct sunlight during storage and transportation.
Container Closure
Keep containers closed to limit water evaporation and precipitation of solid silica particles.
Colloidal Silica for CMP Polishing Questions
Which colloidal silica grades can be evaluated for CMP?
The high-purity candidate grades are HP25D10, HP3010, HP2510A and HP4010A.
Which CMP candidate has the lowest published metal-ion total?
HP25D10 is listed below 20 ppm; the other published HP grades are listed below 50 ppm.
Is a total metal-ion limit sufficient for CMP qualification?
Not always. Buyers should define element-specific limits, analytical methods, detection limits and reporting basis.
What particle controls are needed for CMP?
Define the primary size, distribution, oversized particles, agglomerates, filtration, sampling and measurement method.
Which polishing results should be validated?
Validate removal rate, selectivity, within-wafer uniformity, surface roughness, scratches, particles and other substrate-specific defects.
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Applications of Colloidal Silica for CMP Polishing
HP grades can be evaluated as abrasive candidates in CMP and precision-polishing formulations. Qualification requires particle, contamination, slurry and defect-control data from the actual process.
Semiconductor Wafer CMP
Evaluated as an abrasive dispersion where particle control, metal contamination and slurry chemistry are tightly specified.
Electronic Substrate CMP
Suitable candidates can be tested for compatible ceramic, glass and other precision electronic substrates.
Precision Ceramic Polishing
High-purity grades may be assessed where controlled particle size and trace metals affect surface quality.
Glass and Display Polishing
Controlled nanosilica can be qualified for compatible precision-finishing and functional-material processes.
Compound Semiconductor CMP
Candidate grades can be tested after matching slurry chemistry, removal selectivity and defect limits to the substrate.
Custom CMP Slurry Development
Supports development requiring defined element limits, particle metrology, filtration, lot control and clean packaging.
